| 1. | Different nitridation programs have produced straight and smooth gan nanowires and herringbone gan nanowires on quartz substrates , respectively
我们通过改变氮化程序，分别在石英衬底上合成了平直的gan纳米线和鱼骨形gan纳米线。 |
| 2. | In this paper , high quality transparent and conductive al - doped zno thin films on quartz substrates are prepared by electron beam evaporation technique
本文采用电子束蒸发方法在石英衬底上制备出质量较好的al掺杂的zno薄膜材料。 |
| 3. | The spin - coated films are single - phase and highly oriented with the c - axis perpendicular to the quartz substrates . this type of materials has good thermal stability , and their decomposition points are near 300 c
旋涂法沉积的该类材料的薄膜具有较好的单相结构，材料成膜后，其单相晶体的c轴很好地垂直于石英基片表面。 |
| 4. | The prototype is made by a concave sphere primary and a plane secondary deposited the mo / si multilayer on the fused quartz substrates . the reflectivity peak and the reflectivity uniformity of the multilayer mirrors are respectively 25 % and around + 2 . 5 % at 17 . 1nm
望远镜主镜为球面，次镜为平面，所用反射镜为在熔石英基底上镀制mo si多层膜的euv波段反射镜，在17 . 1nm的反射率25 ，反射率的均匀性2 . 5 。 |
| 5. | 2 . the optical transmission spectra of batio3 thin films annealed at different temperatures on fused quartz substrates are measured . the bandgap energies calculated from their optical transmission spectra are larger than that of single crystals reported in the literatures , whereas for poor - crystallized films with lower annealing temperature , their bandgap energy values are much larger than that of single crystals
发现batio3多晶薄膜的光学带隙大于文献报导的单晶薄膜的光学带隙,对于结晶性好的薄膜,其光学带隙接近于单晶值,退火温度越低,结晶性越差,与单晶的光学带隙相差越大。 |
| 6. | The morphologies of one - dimensional gan nano structures were affected greatly by substrates . we can get different one - dimensional gan nano structures by choosing different substrates . among the products , smooth and straight gan nanowires on quartz substrates , long and transparent gan nanobelts on sapphire substrates , short gan nanorods on si substrates and gan nanopoles on gaas substrates were found , respectively
我们可以通过选择不同的衬底来分别合成形态不同的一维gan纳米结构，其中在石英衬底上合成的是平直的gan纳米线，在蓝宝石衬底上合成的是细长透明的gan纳米带，在gaas衬底上合成的是柱状的一维gan纳米结构，而在以衬底上合成的是粗短的gan纳米棒。 |
| 7. | In the " card - packing " , a znf16pc molecule takes an angle of 52 respect to the substrate . while in the " brick - stacking " , the molecules arrange in a square lattice with lattice constant as 14 . 94a and 14 . 28a under room temperature and 300 respectively . from room temperature to about 150 , f - ptcdi molecules follow the vollmer - weber rule when grown on quartz substrate , as revealed by afm images
在“ card - packing ”模式中，分子平面与石英衬底平面成52左右的二面角；在“ brick - stacking ”模式中，较低温度下，分子以四方点阵平行排列，点阵常数为14 . 94 ；在300的衬底温度下发生构象调整，点阵常数减小为14 . 28 ，分子采取更高密度的堆积方式。 |
| 8. | Two sources of si were identified . one was from the sif62 - ions , which were formed by a reaction between the treatment solution and quartz substrate . the other was attributed to the diffusion of si from the surface of quartz substrate into tio2 thin film at 700 c or higher calcination temperatures
薄膜中的si元素来源于二部分，其中一部分来源于反应液与石英玻璃基片反应所生成的[ sif _ 6 ] ~ ( 2 - )离子，另一部分则来自于薄膜在高温热处理( 700或高于700 )过程中从石英玻璃表面扩散到薄膜中的si元素。 |
| 9. | The bzt thin film has good properties in high frequency . the essential principle , technology process and advantages of the ba ( zr0 . 3ti0 . 7 ) o3 ( bzt ) ferroelectric thin films grown on pt / ti / sio2 / si substrates and quartz substrates by sol - gel process are introduced . the heat - treatment technology was fixed according to the dsc - tg measurement , afm ( atomic force microscope ) and fe - sem ( field emission - scanning electrical microscope )
我们通过在pt / ti / sio2 / si衬底和石英衬底上制备ba ( zr0 . 3ti0 . 7 ) o3铁电薄膜,了解了溶胶-凝胶法( sol - gel )制备薄膜的基本原理、工艺过程及工艺特点;并对所制得的ba ( zr0 . 3ti0 . 7 ) o3薄膜的前驱体溶液和干凝胶进行了差热与热失重( dsc - tg )分析,确定了溶胶在热处理各个阶段的反应情况。 |
| 10. | Znf16pc molecules grow on quartz substrate in a stransky - krastanov model ; a fundamental layer is laid by strong interactions between quartz and f - atoms on znf16pc , on which an amorphous transition layer develops , finally an well ordered film is obtained , " card - packing " , " amorphous accumulation " and " brick - stacking " are adopted hi three different layers
Znf _ ( 16 ) pc分子在石英衬底上的生长基本符合stransky - krastanov模型：通过f -原子与石英衬底的强相互作用形成奠基层，发展成无定型的过渡层，最后形成有序的结晶层。在这三个区域内分子分别采取“ card - packing ” 、 “ amorphousaccumulation ”和“ brick - stacking ”排列方式。 |
